Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

WPB4002

WPB4002

For Reference Only

Part Number WPB4002
PNEDA Part # WPB4002
Description MOSFET N-CH 600V 23A TO3PB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,362
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

WPB4002 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberWPB4002
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
WPB4002, WPB4002 Datasheet (Total Pages: 5, Size: 251.55 KB)
PDFWPB4002-1E Datasheet Cover
WPB4002-1E Datasheet Page 2 WPB4002-1E Datasheet Page 3 WPB4002-1E Datasheet Page 4 WPB4002-1E Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • WPB4002 Datasheet
  • where to find WPB4002
  • ON Semiconductor

  • ON Semiconductor WPB4002
  • WPB4002 PDF Datasheet
  • WPB4002 Stock

  • WPB4002 Pinout
  • Datasheet WPB4002
  • WPB4002 Supplier

  • ON Semiconductor Distributor
  • WPB4002 Price
  • WPB4002 Distributor

WPB4002 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C23A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs84nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 30V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 220W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PB
Package / CaseTO-3P-3, SC-65-3

The Products You May Be Interested In

TK16E60W5,S1VX

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

230mOhm @ 7.9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 790µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 300V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

SQR40020ER_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.33mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8000F @ 25V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252)

Package / Case

TO-252-4, DPak (3 Leads + Tab)

IRFU420

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

360pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251AA

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

TSM60N750CH C5G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

554pF @ 100V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251 (IPAK)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

RSS090P03TB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 5V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

TL431ACLP

TL431ACLP

ON Semiconductor

IC VREF SHUNT ADJ TO92-3

L7805ABD2T-TR

L7805ABD2T-TR

STMicroelectronics

IC REG LINEAR 5V 1.5A D2PAK

CTX01-15473

CTX01-15473

Eaton - Electronics Division

FIXED INDUCTOR

MC74HC00ADR2G

MC74HC00ADR2G

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

MCR03EZPJ000

MCR03EZPJ000

Rohm Semiconductor

RES SMD 0 OHM JUMPER 1/10W 0603

MAX809SEUR+T

MAX809SEUR+T

Maxim Integrated

IC MPU/RESET CIRC SOT23-3

SUD40N08-16-E3

SUD40N08-16-E3

Vishay Siliconix

MOSFET N-CH 80V 40A TO252

VS-30BQ060TRPBF

VS-30BQ060TRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A SMC

IHLP2525CZERR33M01

IHLP2525CZERR33M01

Vishay Dale

FIXED IND 330NH 20A 3.9 MOHM SMD

954206AGLF

954206AGLF

IDT, Integrated Device Technology

IC TIMING CTRL HUB P4 56-TSSOP

LTC4365IDDB#TRMPBF

LTC4365IDDB#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROTECT 8-DFN

T520V337M2R5ATE025

T520V337M2R5ATE025

KEMET

CAP TANT POLY 330UF 2.5V 2917