Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZVN3320ASTOA

ZVN3320ASTOA

For Reference Only

Part Number ZVN3320ASTOA
PNEDA Part # ZVN3320ASTOA
Description MOSFET N-CH 200V 0.1A TO92-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 2,934
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZVN3320ASTOA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZVN3320ASTOA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZVN3320ASTOA Datasheet
  • where to find ZVN3320ASTOA
  • Diodes Incorporated

  • Diodes Incorporated ZVN3320ASTOA
  • ZVN3320ASTOA PDF Datasheet
  • ZVN3320ASTOA Stock

  • ZVN3320ASTOA Pinout
  • Datasheet ZVN3320ASTOA
  • ZVN3320ASTOA Supplier

  • Diodes Incorporated Distributor
  • ZVN3320ASTOA Price
  • ZVN3320ASTOA Distributor

ZVN3320ASTOA Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds45pF @ 25V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

The Products You May Be Interested In

FQD5N40TF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

3.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 1.7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

460pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SKP202

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

45A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

53mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 25V

FET Feature

-

Power Dissipation (Max)

95W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-3

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

2SJ652

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

28A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

38mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4360pF @ 20V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220ML

Package / Case

TO-220-3 Full Pack

CMPDM303NH BK

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 1.8A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 4.5V

Vgs (Max)

12V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 10V

FET Feature

-

Power Dissipation (Max)

350mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23F

Package / Case

SOT-23-3 Flat Leads

IRL530NL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

100mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

ADA4091-2ACPZ-RL

ADA4091-2ACPZ-RL

Analog Devices

IC OPAMP GP 2 CIRCUIT 8LFCSP

TDA08H0SB1

TDA08H0SB1

C&K

SWITCH SLIDE DIP SPST 25MA 24V

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6

LTST-C171KRKT

LTST-C171KRKT

Lite-On Inc.

LED RED CLEAR SMD

SD4933MR

SD4933MR

STMicroelectronics

TRANSISTOR RF MOSFET N-CH M177

GRM21AR72E102KW01D

GRM21AR72E102KW01D

Murata

CAP CER 1000PF 250V X7R 0805

IRG7PH42UDPBF

IRG7PH42UDPBF

Infineon Technologies

IGBT 1200V 85A 320W TO247AC

L6563H

L6563H

STMicroelectronics

IC PFC CTRLR TRANSITION 16SOIC

NC7WZ17P6X

NC7WZ17P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

NC7SZ125M5X

NC7SZ125M5X

ON Semiconductor

IC BUF NON-INVERT 5.5V SOT23-5

TS4984IQT

TS4984IQT

STMicroelectronics

IC AMP AUDIO PWR 1.2W AB 16TQFN

FDS9431A

FDS9431A

ON Semiconductor

MOSFET P-CH 20V 3.5A 8SOIC