Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZVN3320ASTOB

ZVN3320ASTOB

For Reference Only

Part Number ZVN3320ASTOB
PNEDA Part # ZVN3320ASTOB
Description MOSFET N-CH 200V 0.1A TO92-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 3,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZVN3320ASTOB Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZVN3320ASTOB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZVN3320ASTOB Datasheet
  • where to find ZVN3320ASTOB
  • Diodes Incorporated

  • Diodes Incorporated ZVN3320ASTOB
  • ZVN3320ASTOB PDF Datasheet
  • ZVN3320ASTOB Stock

  • ZVN3320ASTOB Pinout
  • Datasheet ZVN3320ASTOB
  • ZVN3320ASTOB Supplier

  • Diodes Incorporated Distributor
  • ZVN3320ASTOB Price
  • ZVN3320ASTOB Distributor

ZVN3320ASTOB Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds45pF @ 25V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageE-Line (TO-92 compatible)
Package / CaseE-Line-3

The Products You May Be Interested In

SQ3419EEV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

7.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1065pF @ 20V

FET Feature

-

Power Dissipation (Max)

5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

DMT6007LFGQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2090pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

PHP20NQ20T,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2470pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

FDV301N-NB9V005

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

220mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

4Ohm @ 400mA, 4.5V

Vgs(th) (Max) @ Id

1.06V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.7nC @ 4.5V

Vgs (Max)

8V

Input Capacitance (Ciss) (Max) @ Vds

9.5pF @ 10V

FET Feature

-

Power Dissipation (Max)

350mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

5HP01M-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

70mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

22Ohm @ 40mA, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6.2pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-MCP

Package / Case

SC-70, SOT-323

Recently Sold

HX2305NL

HX2305NL

Pulse Electronics Network

XFRMR MODUL 2PORT POE 1:1 10/100

FW2500025Z

FW2500025Z

Diodes Incorporated

CRYSTAL 25MHZ 20PF SMD

ADG849YKSZ-REEL7

ADG849YKSZ-REEL7

Analog Devices

IC SWITCH SPDT SC70-6

DS5000-32-16+

DS5000-32-16+

Maxim Integrated

IC MCU 8BIT 32KB NVSRAM 40EDIP

MAX1681ESA

MAX1681ESA

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

KT2520Y40000ECV28TBA

KT2520Y40000ECV28TBA

Kyocera

XTAL OSC TCXO 40.0000MHZ SNWV

ADR421ARMZ-REEL7

ADR421ARMZ-REEL7

Analog Devices

IC VREF SERIES 2.5V 8MSOP

NTF2955T1G

NTF2955T1G

ON Semiconductor

MOSFET P-CH 60V 1.7A SOT-223

SUD40N08-16-E3

SUD40N08-16-E3

Vishay Siliconix

MOSFET N-CH 80V 40A TO252

VS-30BQ060TRPBF

VS-30BQ060TRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A SMC

MT47H64M16NF-25E AIT:M

MT47H64M16NF-25E AIT:M

Micron Technology Inc.

IC DRAM 1G PARALLEL 84FBGA

MCP1826-3302E/ET

MCP1826-3302E/ET

Microchip Technology

IC REG LINEAR 3.3V 1A 5DDPAK