Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZVN4306ASTOA

ZVN4306ASTOA

For Reference Only

Part Number ZVN4306ASTOA
PNEDA Part # ZVN4306ASTOA
Description MOSFET N-CH 60V 1.1A TO92-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 6,930
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZVN4306ASTOA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZVN4306ASTOA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZVN4306ASTOA, ZVN4306ASTOA Datasheet (Total Pages: 6, Size: 361.41 KB)
PDFZVN4306ASTZ Datasheet Cover
ZVN4306ASTZ Datasheet Page 2 ZVN4306ASTZ Datasheet Page 3 ZVN4306ASTZ Datasheet Page 4 ZVN4306ASTZ Datasheet Page 5 ZVN4306ASTZ Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZVN4306ASTOA Datasheet
  • where to find ZVN4306ASTOA
  • Diodes Incorporated

  • Diodes Incorporated ZVN4306ASTOA
  • ZVN4306ASTOA PDF Datasheet
  • ZVN4306ASTOA Stock

  • ZVN4306ASTOA Pinout
  • Datasheet ZVN4306ASTOA
  • ZVN4306ASTOA Supplier

  • Diodes Incorporated Distributor
  • ZVN4306ASTOA Price
  • ZVN4306ASTOA Distributor

ZVN4306ASTOA Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs330mOhm @ 3A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
FET Feature-
Power Dissipation (Max)850mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageE-Line (TO-92 compatible)
Package / CaseE-Line-3

The Products You May Be Interested In

NP160N055TUJ-E2-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SPB10N10L G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

154mOhm @ 8.1A, 10V

Vgs(th) (Max) @ Id

2V @ 21µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

444pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BSC059N03S G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17.5A (Ta), 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2670pF @ 15V

FET Feature

-

Power Dissipation (Max)

17.5W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

STI76NF75

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3700pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SIHP125N60EF-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

EF

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1533pF @ 100V

FET Feature

-

Power Dissipation (Max)

179W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

SD103AW-E3-08

SD103AW-E3-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V SOD123

NC7WZ17P6

NC7WZ17P6

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

TL1014BF160QG

TL1014BF160QG

E-Switch

SWITCH TACTILE SPST-NO 0.05A 12V

DECB33J681KC4B

DECB33J681KC4B

Murata

CAP CER 680PF 6.3KV RADIAL

VMMK-1218-TR1G

VMMK-1218-TR1G

Broadcom

FET RF 5V 10GHZ 0402

T491B106K025AT

T491B106K025AT

KEMET

CAP TANT 10UF 10% 25V 1411

ADM695AR

ADM695AR

Analog Devices

IC SUPER MPU 4.65 100MA 16SOIC

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

ADM3490ARZ

ADM3490ARZ

Analog Devices

IC TRANSCEIVER FULL 1/1 8SOIC

MAX17048G+T10

MAX17048G+T10

Maxim Integrated

IC FUEL GAUGE LI-ION 1CELL 8TDFN

CMS16(TE12L,Q,M)

CMS16(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 3A MFLAT

V48C3V3C75BL

V48C3V3C75BL

Vicor

DC DC CONVERTER 3.3V 75W