Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZVP2106ASTOB

ZVP2106ASTOB

For Reference Only

Part Number ZVP2106ASTOB
PNEDA Part # ZVP2106ASTOB
Description MOSFET P-CH 60V 0.28A TO92-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 6,210
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZVP2106ASTOB Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZVP2106ASTOB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZVP2106ASTOB, ZVP2106ASTOB Datasheet (Total Pages: 3, Size: 53.53 KB)
PDFZVP2106ASTOB Datasheet Cover
ZVP2106ASTOB Datasheet Page 2 ZVP2106ASTOB Datasheet Page 3

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZVP2106ASTOB Datasheet
  • where to find ZVP2106ASTOB
  • Diodes Incorporated

  • Diodes Incorporated ZVP2106ASTOB
  • ZVP2106ASTOB PDF Datasheet
  • ZVP2106ASTOB Stock

  • ZVP2106ASTOB Pinout
  • Datasheet ZVP2106ASTOB
  • ZVP2106ASTOB Supplier

  • Diodes Incorporated Distributor
  • ZVP2106ASTOB Price
  • ZVP2106ASTOB Distributor

ZVP2106ASTOB Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds100pF @ 18V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageE-Line (TO-92 compatible)
Package / CaseE-Line-3

The Products You May Be Interested In

IPD60R600C6BTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id

3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

20.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 100V

FET Feature

-

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRLR3714PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.7nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 10V

FET Feature

-

Power Dissipation (Max)

47W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.15mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

1.95V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3310pF @ 15V

FET Feature

-

Power Dissipation (Max)

141W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

TPW1R005PL,L1Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIX-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

45V

Current - Continuous Drain (Id) @ 25°C

300A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

122nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9600pF @ 22.5V

FET Feature

-

Power Dissipation (Max)

960mW (Ta), 170W (Tc)

Operating Temperature

175°C

Mounting Type

Surface Mount

Supplier Device Package

8-DSOP Advance

Package / Case

8-PowerVDFN

SI7810DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

62mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

Recently Sold

APHHS1005SECK

APHHS1005SECK

Kingbright

LED ORANGE CLEAR CHIP SMD

LT6350HMS8#PBF

LT6350HMS8#PBF

Linear Technology/Analog Devices

IC DIFF CONVERT/ADC DRIVER 8MSOP

74HC74D

74HC74D

Toshiba Semiconductor and Storage

IC FF D-TYPE DUAL 1BIT 14SOIC

74HC273D

74HC273D

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20SOIC

7447709680

7447709680

Wurth Electronics

FIXED IND 68UH 3.2A 89 MOHM SMD

HCPL-181-060E

HCPL-181-060E

Broadcom

OPTOISO 3.75KV TRANS 4MINIFLAT

S25FL064P0XMFI001

S25FL064P0XMFI001

Cypress Semiconductor

IC FLASH 64M SPI 104MHZ 16SOIC

0CNL200.V

0CNL200.V

Littelfuse

FUSE STRIP 200A 32VAC/VDC BOLT

17-21SURC/S530-A3/TR8

17-21SURC/S530-A3/TR8

Everlight Electronics Co Ltd

LED RED CLEAR SMD

SMBJ12CA

SMBJ12CA

TVS DIODE 12V 19.9V SMB

PA95

PA95

Apex Microtechnology

IC OPAMP POWER 1 CIRCUIT 8SIP

MAX912ESE+

MAX912ESE+

Maxim Integrated

IC COMPARATOR LP 16-SOIC