Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZXM61P02FTA

ZXM61P02FTA ZXM61P02FTA

For Reference Only

Part Number ZXM61P02FTA
PNEDA Part # ZXM61P02FTA
Description MOSFET P-CH 20V 0.9A SOT23-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 238,566
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXM61P02FTA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXM61P02FTA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZXM61P02FTA, ZXM61P02FTA Datasheet (Total Pages: 7, Size: 601.87 KB)
PDFZXM61P02FTC Datasheet Cover
ZXM61P02FTC Datasheet Page 2 ZXM61P02FTC Datasheet Page 3 ZXM61P02FTC Datasheet Page 4 ZXM61P02FTC Datasheet Page 5 ZXM61P02FTC Datasheet Page 6 ZXM61P02FTC Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZXM61P02FTA Datasheet
  • where to find ZXM61P02FTA
  • Diodes Incorporated

  • Diodes Incorporated ZXM61P02FTA
  • ZXM61P02FTA PDF Datasheet
  • ZXM61P02FTA Stock

  • ZXM61P02FTA Pinout
  • Datasheet ZXM61P02FTA
  • ZXM61P02FTA Supplier

  • Diodes Incorporated Distributor
  • ZXM61P02FTA Price
  • ZXM61P02FTA Distributor

ZXM61P02FTA Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs600mOhm @ 610mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.5nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 15V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

IRFR13N15DTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 8.3A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

FET Feature

-

Power Dissipation (Max)

86W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IXTK46N50L

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

160mOhm @ 500mA, 20V

Vgs(th) (Max) @ Id

6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 15V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 25V

FET Feature

-

Power Dissipation (Max)

700W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264 (IXTK)

Package / Case

TO-264-3, TO-264AA

STL10HN65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IPB100N06S3-04

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

314nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14230pF @ 25V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDP5690

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

27mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1120pF @ 25V

FET Feature

-

Power Dissipation (Max)

58W (Tc)

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Recently Sold

H1102NLT

H1102NLT

Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

LTM4613IV#PBF

LTM4613IV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 12V 8A

BAT54C

BAT54C

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT23-3

AD8031ARZ

AD8031ARZ

Analog Devices

IC OPAMP VFB 1 CIRCUIT 8SOIC

LTST-C191GKT

LTST-C191GKT

Lite-On Inc.

LED GREEN CLEAR CHIP SMD

LBM2016T330J

LBM2016T330J

Taiyo Yuden

FIXED IND 33UH 125MA 3.6 OHM SMD

RL2010FK-070R43L

RL2010FK-070R43L

Yageo

RES 0.43 OHM 1% 3/4W 2010

20CTQ045

20CTQ045

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 45V TO220AB

MCP6566UT-E/OT

MCP6566UT-E/OT

Microchip Technology

IC COMPARATOR O-D 1.8V SOT23-5

MB95F698KPMC-G-SNE2

MB95F698KPMC-G-SNE2

Cypress Semiconductor

IC MCU 8BIT 60KB FLASH 48LQFP

DS9503P+

DS9503P+

Maxim Integrated

TVS DIODE 7.5V 6TSOC

IHLP2525CZERR47M01

IHLP2525CZERR47M01

Vishay Dale

FIXED IND 470NH 17.5A 4.2 MOHM