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ZXMHN6A07T8TA

ZXMHN6A07T8TA

For Reference Only

Part Number ZXMHN6A07T8TA
PNEDA Part # ZXMHN6A07T8TA
Description MOSFET 4N-CH 60V 1.4A SM8
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 3,366
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMHN6A07T8TA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMHN6A07T8TA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
ZXMHN6A07T8TA, ZXMHN6A07T8TA Datasheet (Total Pages: 8, Size: 592.95 KB)
PDFZXMHN6A07T8TA Datasheet Cover
ZXMHN6A07T8TA Datasheet Page 2 ZXMHN6A07T8TA Datasheet Page 3 ZXMHN6A07T8TA Datasheet Page 4 ZXMHN6A07T8TA Datasheet Page 5 ZXMHN6A07T8TA Datasheet Page 6 ZXMHN6A07T8TA Datasheet Page 7 ZXMHN6A07T8TA Datasheet Page 8

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ZXMHN6A07T8TA Specifications

ManufacturerDiodes Incorporated
Series-
FET Type4 N-Channel (H-Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.4A
Rds On (Max) @ Id, Vgs300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds166pF @ 40V
Power - Max1.6W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-223-8
Supplier Device PackageSM8

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FET Type

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FET Feature

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

300A

Rds On (Max) @ Id, Vgs

3.6mOhm @ 150A, 10V

Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Operating Temperature

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FET Type

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FET Feature

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

22.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

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Diodes Incorporated

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Series

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FET Type

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FET Feature

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Supplier Device Package

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Microsemi

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Series

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FET Type

2 N-Channel (Half Bridge)

FET Feature

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

39A

Rds On (Max) @ Id, Vgs

70mOhm @ 39A, 10V

Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

259nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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ON Semiconductor

Manufacturer

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Series

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FET Type

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FET Feature

Logic Level Gate, 1.8V Drive

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2A, 1.5A

Rds On (Max) @ Id, Vgs

136mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Supplier Device Package

6-MCPH

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