Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZXMN6A08KTC

ZXMN6A08KTC

For Reference Only

Part Number ZXMN6A08KTC
PNEDA Part # ZXMN6A08KTC
Description MOSFET N-CH 60V 5.36A DPAK
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 68,814
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMN6A08KTC Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMN6A08KTC
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZXMN6A08KTC, ZXMN6A08KTC Datasheet (Total Pages: 8, Size: 660.38 KB)
PDFZXMN6A08KTC Datasheet Cover
ZXMN6A08KTC Datasheet Page 2 ZXMN6A08KTC Datasheet Page 3 ZXMN6A08KTC Datasheet Page 4 ZXMN6A08KTC Datasheet Page 5 ZXMN6A08KTC Datasheet Page 6 ZXMN6A08KTC Datasheet Page 7 ZXMN6A08KTC Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZXMN6A08KTC Datasheet
  • where to find ZXMN6A08KTC
  • Diodes Incorporated

  • Diodes Incorporated ZXMN6A08KTC
  • ZXMN6A08KTC PDF Datasheet
  • ZXMN6A08KTC Stock

  • ZXMN6A08KTC Pinout
  • Datasheet ZXMN6A08KTC
  • ZXMN6A08KTC Supplier

  • Diodes Incorporated Distributor
  • ZXMN6A08KTC Price
  • ZXMN6A08KTC Distributor

ZXMN6A08KTC Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5.36A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs80mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds459pF @ 40V
FET Feature-
Power Dissipation (Max)2.12W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IRFR320TRL

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

RV3C002UNT2CL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

2Ohm @ 150mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

12pF @ 10V

FET Feature

-

Power Dissipation (Max)

100mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VML0604

Package / Case

3-XFDFN

BSC050N03MSGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-5

Package / Case

8-PowerTDFN

IRFI840GPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

IPB015N04LGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

346nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

28000pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

PI4ULS5V202UEX

PI4ULS5V202UEX

Diodes Incorporated

IC TRNSLTR BIDIRECTIONAL 8MSOP

TL074ID

TL074ID

STMicroelectronics

IC OPAMP JFET 4 CIRCUIT 14SO

B82422A1103K100

B82422A1103K100

TDK-EPCOS

FIXED IND 10UH 180MA 1.6 OHM SMD

2920L150DR

2920L150DR

Littelfuse

PTC RESET FUSE 33V 1.5A 2920

SIS456DN-T1-GE3

SIS456DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 35A PPAK 1212-8

ZHCS400TA

ZHCS400TA

Diodes Incorporated

DIODE SCHOTTKY 40V 400MA SOD323

B160B-13-F

B160B-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 1A SMB

MT40A256M16GE-083E IT:B

MT40A256M16GE-083E IT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

ATXMEGA16A4U-AU

ATXMEGA16A4U-AU

Microchip Technology

IC MCU 8/16BIT 16KB FLASH 44TQFP

IRFR5305PBF

IRFR5305PBF

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

NE5534AN

NE5534AN

ON Semiconductor

IC OPAMP GP 1 CIRCUIT 8DIP

MBR0520LT1G

MBR0520LT1G

ON Semiconductor

DIODE SCHOTTKY 20V 500MA SOD123