Diodes & Rectifiers

Part Number	Description	In Stock
HT16G R0G Taiwan Semiconductor Corporation	Rectifiers - Single DIODE GEN PURP 600V 1A TS-1 Manufacturer: Taiwan Semiconductor Corporation Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	In Stock8,712
HT17G A0G Taiwan Semiconductor Corporation	Rectifiers - Single DIODE GEN PURP 800V 1A TS-1 Manufacturer: Taiwan Semiconductor Corporation Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	In Stock7,848
HT17G A1G Taiwan Semiconductor Corporation	Rectifiers - Single DIODE GEN PURP 800V 1A TS-1 Manufacturer: Taiwan Semiconductor Corporation Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	In Stock8,460
HT17G R0G Taiwan Semiconductor Corporation	Rectifiers - Single DIODE GEN PURP 800V 1A TS-1 Manufacturer: Taiwan Semiconductor Corporation Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	In Stock4,374
HT18G A0G Taiwan Semiconductor Corporation	Rectifiers - Single DIODE GEN PURP 1A TS-1 Manufacturer: Taiwan Semiconductor Corporation Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	In Stock8,226
HT18G A1G Taiwan Semiconductor Corporation	Rectifiers - Single DIODE GEN PURP 1A TS-1 Manufacturer: Taiwan Semiconductor Corporation Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	In Stock2,268
HT18G R0G Taiwan Semiconductor Corporation	Rectifiers - Single DIODE GEN PURP 1A TS-1 Manufacturer: Taiwan Semiconductor Corporation Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	In Stock3,636
HU10260 Microsemi	Rectifiers - Single DIODE GEN PURP 600V 100A HALFPAK Manufacturer: Microsemi Corporation Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 275pF @ 10V, 1Mhz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	In Stock5,346
HU10260R Microsemi	Rectifiers - Single DIODE GEN PURP 600V 100A HALFPAK Manufacturer: Microsemi Corporation Series: - Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 275pF @ 10V, 1Mhz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	In Stock2,718
HU20260 Microsemi	Rectifiers - Single DIODE GEN PURP 600V 200A HALFPAK Manufacturer: Microsemi Corporation Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	In Stock4,608
HU20260R Microsemi	Rectifiers - Single DIODE GEN PURP 600V 200A HALFPAK Manufacturer: Microsemi Corporation Series: - Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	In Stock3,544
IDB06S60C Infineon Technologies	Rectifiers - Single DIODE SCHOTTKY 600V 6A D2PAK Manufacturer: Infineon Technologies Series: CoolSiC™+ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 80µA @ 600V Capacitance @ Vr, F: 280pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	In Stock5,076
IDB06S60CATMA2 Infineon Technologies	Rectifiers - Single DIODE SCHOTTKY 600V 6A TO263-3-2 Manufacturer: Infineon Technologies Series: CoolSiC™+ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 80µA @ 600V Capacitance @ Vr, F: 280pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -	In Stock4,410
IDB09E60ATMA1 Infineon Technologies	Rectifiers - Single DIODE GEN PURP 600V 19.3A TO263 Manufacturer: Infineon Technologies Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 19.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -55°C ~ 175°C	In Stock6,192
IDB10S60C Infineon Technologies	Rectifiers - Single DIODE SILICON 600V 10A D2PAK Manufacturer: Infineon Technologies Series: CoolSiC™+ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 140µA @ 600V Capacitance @ Vr, F: 480pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	In Stock2,106
IDB10S60CATMA2 Infineon Technologies	Rectifiers - Single DIODE SCHOTTKY 600V 10A D2PAK Manufacturer: Infineon Technologies Series: CoolSiC™+ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 140µA @ 600V Capacitance @ Vr, F: 480pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	In Stock3,672
IDB12E120ATMA1 Infineon Technologies	Rectifiers - Single DIODE GEN PURP 1.2KV 28A TO263-3 Manufacturer: Infineon Technologies Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 28A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -55°C ~ 150°C	In Stock7,398
IDB15E60 Infineon Technologies	Rectifiers - Single DIODE GEN PURP 600V 29.2A TO263 Manufacturer: Infineon Technologies Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 29.2A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -55°C ~ 175°C	In Stock4,140
IDB15E60ATMA1 Infineon Technologies	Rectifiers - Single DIODE GEN PURP 600V 29.2A TO263 Manufacturer: Infineon Technologies Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 29.2A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -40°C ~ 175°C	In Stock8,028
IDB18E120ATMA1 Infineon Technologies	Rectifiers - Single DIODE GEN PURP 1.2KV 31A TO263-3 Manufacturer: Infineon Technologies Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 31A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 18A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 195ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -55°C ~ 150°C	In Stock6,858
IDB23E60ATMA1 Infineon Technologies	Rectifiers - Single DIODE GEN PURP 600V 41A TO263-3 Manufacturer: Infineon Technologies Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 41A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 23A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock6,264
IDB30E120ATMA1 Infineon Technologies	Rectifiers - Single DIODE GEN PURP 1.2KV 50A TO263-3 Manufacturer: Infineon Technologies Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 243ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -55°C ~ 150°C	In Stock2,898
IDB30E60ATMA1 Infineon Technologies	Rectifiers - Single DIODE GEN PURP 600V 52.3A TO263 Manufacturer: Infineon Technologies Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 52.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 126ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -40°C ~ 175°C	In Stock8,046
IDB45E60ATMA1 Infineon Technologies	Rectifiers - Single DIODE GEN PURP 600V 71A TO263-3 Manufacturer: Infineon Technologies Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 71A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 45A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -55°C ~ 175°C	In Stock5,292
IDC04S60CEX1SA1 Infineon Technologies	Rectifiers - Single DIODE SIC 600V 4A SAWN WAFER Manufacturer: Infineon Technologies Series: CoolSiC™+ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C	In Stock7,020
IDC04S60CEX7SA1 Infineon Technologies	Rectifiers - Single DIODE GEN PURPOSE SAWN WAFER Manufacturer: Infineon Technologies Series: * Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -	In Stock5,706
IDC05S120C5X1SA1 Infineon Technologies	Rectifiers - Single IC DIODE EMITTER CTLR WAFER Manufacturer: Infineon Technologies Series: - Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -	In Stock6,102
IDC05S60CEX1SA1 Infineon Technologies	Rectifiers - Single DIODE SIC 600V 5A SAWN WAFER Manufacturer: Infineon Technologies Series: CoolSiC™+ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 70µA @ 600V Capacitance @ Vr, F: 240pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C	In Stock7,326
IDC08D120T6MX1SA2 Infineon Technologies	Rectifiers - Single DIODE GEN PURP 1.2KV 10A WAFER Manufacturer: Infineon Technologies Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.05V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.7µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	In Stock4,968
IDC08S120EX1SA3 Infineon Technologies	Rectifiers - Single DIODE SCHOTTKY 1.2KV 7.5A WAFER Manufacturer: Infineon Technologies Series: CoolSiC™+ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 7.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 180µA @ 1200V Capacitance @ Vr, F: 380pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	In Stock7,884

HT16G R0G

Taiwan Semiconductor Corporation

Rectifiers - Single

DIODE GEN PURP 600V 1A TS-1

Manufacturer: Taiwan Semiconductor Corporation
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

In Stock8,712

HT17G A0G

Taiwan Semiconductor Corporation

Rectifiers - Single

DIODE GEN PURP 800V 1A TS-1

Manufacturer: Taiwan Semiconductor Corporation
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

In Stock7,848

HT17G A1G

Taiwan Semiconductor Corporation

Rectifiers - Single

DIODE GEN PURP 800V 1A TS-1

Manufacturer: Taiwan Semiconductor Corporation
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

In Stock8,460

HT17G R0G

Taiwan Semiconductor Corporation

Rectifiers - Single

DIODE GEN PURP 800V 1A TS-1

Manufacturer: Taiwan Semiconductor Corporation
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

In Stock4,374

HT18G A0G

Taiwan Semiconductor Corporation

Rectifiers - Single

DIODE GEN PURP 1A TS-1

Manufacturer: Taiwan Semiconductor Corporation
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

In Stock8,226

HT18G A1G

Taiwan Semiconductor Corporation

Rectifiers - Single

DIODE GEN PURP 1A TS-1

Manufacturer: Taiwan Semiconductor Corporation
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

In Stock2,268

HT18G R0G

Taiwan Semiconductor Corporation

Rectifiers - Single

DIODE GEN PURP 1A TS-1

Manufacturer: Taiwan Semiconductor Corporation
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

In Stock3,636

HU10260

Microsemi

Rectifiers - Single

DIODE GEN PURP 600V 100A HALFPAK

Manufacturer: Microsemi Corporation
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

In Stock5,346

HU10260R

Microsemi

Rectifiers - Single

DIODE GEN PURP 600V 100A HALFPAK

Manufacturer: Microsemi Corporation
Series: -
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

In Stock2,718

HU20260

Microsemi

Rectifiers - Single

DIODE GEN PURP 600V 200A HALFPAK

Manufacturer: Microsemi Corporation
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

In Stock4,608

HU20260R

Microsemi

Rectifiers - Single

DIODE GEN PURP 600V 200A HALFPAK

Manufacturer: Microsemi Corporation
Series: -
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

In Stock3,544

IDB06S60C

Infineon Technologies

Rectifiers - Single

DIODE SCHOTTKY 600V 6A D2PAK

Manufacturer: Infineon Technologies
Series: CoolSiC™+
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 80µA @ 600V
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

In Stock5,076

IDB06S60CATMA2

Infineon Technologies

Rectifiers - Single

DIODE SCHOTTKY 600V 6A TO263-3-2

Manufacturer: Infineon Technologies
Series: CoolSiC™+
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 80µA @ 600V
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -

In Stock4,410

IDB09E60ATMA1

Infineon Technologies

Rectifiers - Single

DIODE GEN PURP 600V 19.3A TO263

Manufacturer: Infineon Technologies
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 19.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Operating Temperature - Junction: -55°C ~ 175°C

In Stock6,192

IDB10S60C

Infineon Technologies

Rectifiers - Single

DIODE SILICON 600V 10A D2PAK

Manufacturer: Infineon Technologies
Series: CoolSiC™+
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 140µA @ 600V
Capacitance @ Vr, F: 480pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

In Stock2,106

IDB10S60CATMA2

Infineon Technologies

Rectifiers - Single

DIODE SCHOTTKY 600V 10A D2PAK

Manufacturer: Infineon Technologies
Series: CoolSiC™+
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 140µA @ 600V
Capacitance @ Vr, F: 480pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

In Stock3,672

IDB12E120ATMA1

Infineon Technologies

Rectifiers - Single

DIODE GEN PURP 1.2KV 28A TO263-3

Manufacturer: Infineon Technologies
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 28A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C

In Stock7,398

IDB15E60

Infineon Technologies

Rectifiers - Single

DIODE GEN PURP 600V 29.2A TO263

Manufacturer: Infineon Technologies
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 29.2A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Operating Temperature - Junction: -55°C ~ 175°C

In Stock4,140

IDB15E60ATMA1

Infineon Technologies

Rectifiers - Single

DIODE GEN PURP 600V 29.2A TO263

Manufacturer: Infineon Technologies
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 29.2A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Operating Temperature - Junction: -40°C ~ 175°C

In Stock8,028

IDB18E120ATMA1

Infineon Technologies

Rectifiers - Single

DIODE GEN PURP 1.2KV 31A TO263-3

Manufacturer: Infineon Technologies
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 31A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 18A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 195ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Operating Temperature - Junction: -55°C ~ 150°C

In Stock6,858

IDB23E60ATMA1

Infineon Technologies

Rectifiers - Single

DIODE GEN PURP 600V 41A TO263-3

Manufacturer: Infineon Technologies
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 41A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 23A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock6,264

IDB30E120ATMA1

Infineon Technologies

Rectifiers - Single

DIODE GEN PURP 1.2KV 50A TO263-3

Manufacturer: Infineon Technologies
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 243ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Operating Temperature - Junction: -55°C ~ 150°C

In Stock2,898

IDB30E60ATMA1

Infineon Technologies

Rectifiers - Single

DIODE GEN PURP 600V 52.3A TO263

Manufacturer: Infineon Technologies
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 52.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 126ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -40°C ~ 175°C

In Stock8,046

IDB45E60ATMA1

Infineon Technologies

Rectifiers - Single

DIODE GEN PURP 600V 71A TO263-3

Manufacturer: Infineon Technologies
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 71A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 45A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Operating Temperature - Junction: -55°C ~ 175°C

In Stock5,292

IDC04S60CEX1SA1

Infineon Technologies

Rectifiers - Single

DIODE SIC 600V 4A SAWN WAFER

Manufacturer: Infineon Technologies
Series: CoolSiC™+
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C

In Stock7,020

IDC04S60CEX7SA1

Infineon Technologies

Rectifiers - Single

DIODE GEN PURPOSE SAWN WAFER

Manufacturer: Infineon Technologies
Series: *
Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -

In Stock5,706

IDC05S120C5X1SA1

Infineon Technologies

Rectifiers - Single

IC DIODE EMITTER CTLR WAFER

Manufacturer: Infineon Technologies
Series: -
Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -

In Stock6,102

IDC05S60CEX1SA1

Infineon Technologies

Rectifiers - Single

DIODE SIC 600V 5A SAWN WAFER

Manufacturer: Infineon Technologies
Series: CoolSiC™+
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 70µA @ 600V
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C

In Stock7,326

IDC08D120T6MX1SA2

Infineon Technologies

Rectifiers - Single

DIODE GEN PURP 1.2KV 10A WAFER

Manufacturer: Infineon Technologies
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2.05V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.7µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

In Stock4,968

IDC08S120EX1SA3

Infineon Technologies

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 7.5A WAFER

Manufacturer: Infineon Technologies
Series: CoolSiC™+
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 7.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 180µA @ 1200V
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C

In Stock7,884

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