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CategorySemiconductors / Memory ICs / Memory
Records 46,590
Page 520/1553
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Memory Type | Memory Format | Technology | Memory Size | Memory Interface | Clock Frequency | Write Cycle Time - Word, Page | Access Time | Voltage - Supply | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
IC EEPROM 256K PARALLEL 32PLCC |
6,030 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (11.43x13.97) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 400MHZ |
8,892 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gb (64M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
8,244 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 84TWBGA |
2,394 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
8,370 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
8,802 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
|
Microchip Technology |
IC EEPROM 256K PARALLEL 28TSOP |
4,824 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
|
|
|
Cypress Semiconductor |
IC NVSRAM 1M SPI 40MHZ 8DFN |
3,906 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | SPI | 40MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (5x6) |
|
|
|
Micron Technology Inc. |
IC FLASH RAM 4G PARALLEL 533MHZ |
3,276 |
|
- | Non-Volatile | FLASH, RAM | FLASH - NAND, DRAM - LPDDR2 | 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2) | Parallel | 533MHz | - | - | 1.8V | -25°C ~ 85°C (TA) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
|
|
|
Micron Technology Inc. |
IC FLASH RAM 4G PARALLEL 533MHZ |
3,960 |
|
- | Non-Volatile | FLASH, RAM | FLASH - NAND, DRAM - LPDDR2 | 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2) | Parallel | 533MHz | - | - | 1.8V | -25°C ~ 85°C (TA) | - | - | - |
|
|
|
Micron Technology Inc. |
IC FLASH RAM 4G PARALLEL 533MHZ |
4,284 |
|
- | Non-Volatile | FLASH, RAM | FLASH - NAND, DRAM - LPDDR2 | 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2) | Parallel | 533MHz | - | - | 1.8V | -25°C ~ 85°C (TA) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
|
|
|
Cypress Semiconductor |
IC SRAM 8M PARALLEL 44TSOP II |
3,402 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 45ns | 45ns | 2.2V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 100TQFP |
4,266 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 9Mb (256K x 36) | Parallel | - | - | 7.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 100TQFP |
5,382 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 9Mb (256K x 36) | Parallel | - | - | 8ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 100TQFP |
6,930 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 9Mb (256K x 36) | Parallel | - | - | 8.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 44TSOP2 |
2,610 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 8ns | 8ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
Micron Technology Inc. |
IC DRAM 8G PARALLEL 1.33GHZ |
8,064 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 8Gb (1G x 8) | Parallel | 1.33GHz | - | - | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (8x12) |
|
|
|
Micron Technology Inc. |
MODULE EMMC 4GB 100LBGA |
2,430 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA |
5,004 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 1Gb (64M x 16) | Parallel | 200MHz | 15ns | 5ns | 1.7V ~ 1.95V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
5,688 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
7,038 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
Alliance Memory, Inc. |
IC DRAM 2G PARALLEL 84TFBGA |
5,472 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (128M x 16) | Parallel | 400MHz | 15ns | - | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Surface Mount | 84-TFBGA | 84-TFBGA (8x12.5) |
|
|
|
Winbond Electronics |
IC DDR2 SDRAM 2GBIT 2.5NS 60WBGA |
6,678 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (256M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Surface Mount | 84-TFBGA | 84-WBGA (8x12.5) |
|
|
|
Winbond Electronics |
IC DDR2 SDRAM 2GBIT 2.5NS 84BGA |
5,724 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (128M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Surface Mount | 84-TFBGA | 84-WBGA (8x12.5) |
|
|
|
Micron Technology Inc. |
IC RAM 8G PARALLEL 1.75GHZ |
5,238 |
|
- | Volatile | RAM | SGRAM - GDDR5 | 8Gb (256M x 32) | Parallel | 1.75GHz | - | - | 1.31V ~ 1.39V, 1.46V ~ 1.55V | 0°C ~ 95°C (TC) | Surface Mount | 170-TFBGA | 170-FBGA (12x14) |
|
|
|
Micron Technology Inc. |
IC RAM 8G PARALLEL 2.0GHZ FBGA |
3,186 |
|
- | Volatile | RAM | SGRAM - GDDR5 | 8Gb (256M x 32) | Parallel | 2.0GHz | - | - | 1.31V ~ 1.39V, 1.46V ~ 1.55V | 0°C ~ 95°C (TC) | Surface Mount | 170-TFBGA | 170-FBGA (12x14) |
|
|
|
Micron Technology Inc. |
IC RAM 8G PARALLEL 1.75GHZ |
2,016 |
|
- | Volatile | RAM | SGRAM - GDDR5 | 8Gb (256M x 32) | Parallel | 1.75GHz | - | - | 1.3V ~ 1.545V | 0°C ~ 95°C (TC) | - | - | - |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
8,640 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (32M x 16) | Parallel | 166MHz | - | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
|
|
|
Cypress Semiconductor |
IC SRAM 4M PARALLEL 165FBGA |
4,572 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4Mb (128K x 36) | Parallel | 100MHz | - | 8ns | 3.135V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 44TSOP II |
5,886 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3.135V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |