Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

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Part Number	Description	In Stock
CSD17579Q3A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 35A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 998pF @ 15V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 29W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.15) Package / Case: 8-PowerVDFN	In Stock7,802
CSD17579Q3AT Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 35A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 998pF @ 15V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 29W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.15) Package / Case: 8-PowerVDFN	In Stock52,332
CSD17579Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 25A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock334
CSD17579Q5AT Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 25A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock14,412
CSD17581Q3A Texas Instruments	Transistors - FETs, MOSFETs - Single 30V N CH MOSFET Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.15) Package / Case: 8-PowerVDFN	In Stock51,378
CSD17581Q3AT Texas Instruments	Transistors - FETs, MOSFETs - Single 30V N-CHANNEL NEXFET POWER MOSFE Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.15) Package / Case: 8-PowerVDFN	In Stock15,708
CSD17581Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single 30V N CH MOSFET Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 15V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock5,076
CSD17581Q5AT Texas Instruments	Transistors - FETs, MOSFETs - Single 30V N-CHANNEL NEXFET POWER MOSFE Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 15V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock13,092
CSD17585F5 Texas Instruments	Transistors - FETs, MOSFETs - Single 30V N CH MOSFET Manufacturer: Series: FemtoFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 900mA, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	In Stock54,318
CSD17585F5T Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.9A PICOSTAR Manufacturer: Series: FemtoFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 900mA, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	In Stock45,432
CSD18501Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3840pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock630,240
CSD18502KCS Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220-3 Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4680pF @ 20V FET Feature: - Power Dissipation (Max): 259W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock6,624
CSD18502Q5B Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock7,686
CSD18502Q5BT Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock7,308
CSD18503KCS Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220-3 Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 20V FET Feature: - Power Dissipation (Max): 188W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock15,804
CSD18503Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2640pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock215,496
CSD18503Q5AT Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2640pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock17,112
CSD18504KCS Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V TO220-3 Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 20V FET Feature: - Power Dissipation (Max): 115W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock6,120
CSD18504Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1656pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock618,072
CSD18504Q5AT Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 40V 50A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1656pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock32,358
CSD18509Q5B Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13900pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock60,426
CSD18509Q5BT Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13900pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock401,958
CSD18510KCS Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 200A TO220-3 Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 20V FET Feature: - Power Dissipation (Max): 250W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock17,700
CSD18510KTT Texas Instruments	Transistors - FETs, MOSFETs - Single GEN1.4 40V-20V Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 274A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 20V FET Feature: - Power Dissipation (Max): 250W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock16,404
CSD18510KTTT Texas Instruments	Transistors - FETs, MOSFETs - Single 40V N-CHANNEL NEXFET POWER MOSF Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 274A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 15V FET Feature: - Power Dissipation (Max): 250W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA	In Stock5,472
CSD18510Q5B Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 300A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.96mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 20V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock8,370
CSD18510Q5BT Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 300A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.96mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 20V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock20,616
CSD18511KCS Texas Instruments	Transistors - FETs, MOSFETs - Single NEW LF VERSION OF CSD18502KCS Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 194A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 20V FET Feature: - Power Dissipation (Max): 188W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock20,196
CSD18511KTT Texas Instruments	Transistors - FETs, MOSFETs - Single GEN1.4 40V-20V Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 194A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 20V FET Feature: - Power Dissipation (Max): 188W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,778
CSD18511KTTT Texas Instruments	Transistors - FETs, MOSFETs - Single 40-V N-CHANNEL NEXFET POWER MOS Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Ta), 194A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 20V FET Feature: - Power Dissipation (Max): 188W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,796

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