Transistors

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Records 64,903

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Part Number	Description	In Stock
IPA80R1K0CEXKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO-220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ CE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V FET Feature: - Power Dissipation (Max): 32W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock6,012
IPA80R1K2P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 4.5A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 500V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock7,320
IPA80R1K4CEXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO-220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ CE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3.9V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V FET Feature: - Power Dissipation (Max): 31W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock7,650
IPA80R1K4CEXKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET NCH 800V 3.9A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3.9V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V FET Feature: - Power Dissipation (Max): 31W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock16,104
IPA80R1K4P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 4A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 500V FET Feature: Super Junction Power Dissipation (Max): 24W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock6,462
IPA80R280P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 17A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 360µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V FET Feature: Super Junction Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock15,480
IPA80R310CEXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO-220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ CE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 100V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock7,254
IPA80R310CEXKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO-220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 100V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock14,592
IPA80R360P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 800V 13A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock4,968
IPA80R450P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 11A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 500V FET Feature: Super Junction Power Dissipation (Max): 29W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock14,520
IPA80R460CEXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO-220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ CE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 680µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V FET Feature: - Power Dissipation (Max): 34W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock7,560
IPA80R460CEXKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO-220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 680µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V FET Feature: - Power Dissipation (Max): 34W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock6,102
IPA80R600P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 800V 8A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 500V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock8,694
IPA80R650CEXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO-220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ CE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 470µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V FET Feature: - Power Dissipation (Max): 33W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock4,104
IPA80R650CEXKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO-220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 470µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V FET Feature: - Power Dissipation (Max): 33W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock14,940
IPA80R750P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 800V 7A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V FET Feature: - Power Dissipation (Max): 27W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock8,496
IPA80R900P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 800V 6A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V FET Feature: - Power Dissipation (Max): 26W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock5,238
IPA90R1K0C3XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 5.7A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 370µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 100V FET Feature: - Power Dissipation (Max): 32W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock12,780
IPA90R1K2C3XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 5.1A 10-220FP Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V FET Feature: - Power Dissipation (Max): 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock9,720
IPA90R1K2C3XKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V TO220-3 Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,598
IPA90R340C3XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 15A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock24,666
IPA90R340C3XKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock3,078
IPA90R500C3XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 11A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 740µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 100V FET Feature: - Power Dissipation (Max): 34W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock58,842
IPA90R500C3XKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 740µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 100V FET Feature: - Power Dissipation (Max): 34W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock8,028
IPA90R800C3XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 6.9A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 460µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V FET Feature: - Power Dissipation (Max): 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock19,716
IPA90R800C3XKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V TO220-3 Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,552
IPA95R1K2P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 6A TO252 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 478pF @ 400V FET Feature: - Power Dissipation (Max): 27W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock12,042
IPA95R450P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 14A TO252 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 360µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1053pF @ 400V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock9,576
IPA95R750P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 9A TO252 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 712pF @ 400V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock20,388
IPAN50R500CEXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET NCH 500V 11.1A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	In Stock8,856

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