Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 735/2164

Part Number	Description	In Stock
APTC90DSK12T1G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 900V 30A SP1 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock2,754
APTC90H12SCTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 900V 30A SP4 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: 4 N-Channel (H-Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock3,816
APTC90H12T1G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 900V 30A SP1 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: 4 N-Channel (H-Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock8,784
APTC90H12T2G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 900V 30A SP2 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: 4 N-Channel (H-Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP2 Supplier Device Package: SP2	In Stock4,500
APTC90HM60T3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 900V 59A SP3 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: 4 N-Channel (H-Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock3,456
APTC90TAM60TPG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 900V 59A SP6-P Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	In Stock7,218
APTJC120AM13VCT1AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET SIC PHASE LEG MODULE Manufacturer: Microsemi Corporation Series: - FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	In Stock5,904
APTJC120AM25VCT1AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET MODULE Manufacturer: Microsemi Corporation Series: - FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,348
APTM08TAM04PG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 75V 120A SP6-P Manufacturer: Microsemi Corporation Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Power - Max: 138W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	In Stock5,861
APTM08TDUM04PG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 75V 120A SP6-P Manufacturer: Microsemi Corporation Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Power - Max: 138W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	In Stock7,902
APTM100A12STG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 68A LP8W Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 68A Rds On (Max) @ Id, Vgs: 120mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 616nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17400pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock3,546
APTM100A13DG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 65A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock5,058
APTM100A13SCG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 65A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock2,100
APTM100A13SG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 65A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock7,470
APTM100A18FTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 43A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 43A Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock6,930
APTM100A23SCTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 36A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 270mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock6,876
APTM100A23STG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 36A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 270mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock3,942
APTM100A40FT1G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 21A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 21A Rds On (Max) @ Id, Vgs: 480mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock7,884
APTM100A46FT1G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 19A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 19A Rds On (Max) @ Id, Vgs: 552mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock3,384
APTM100AM90FG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 78A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 78A Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock6,966
APTM100DDA35T3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 22A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock5,904
APTM100DSK35T3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 22A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock7,344
APTM100DU18TG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 43A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 43A Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock2,214
APTM100DUM90G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 78A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 78A Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock2,916
APTM100H18FG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 43A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 43A Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock2,682
APTM100H35FT3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 22A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock7,596
APTM100H35FTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 22A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock7,362
APTM100H45FT3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 18A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock6,228
APTM100H45SCTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 18A SP4 Manufacturer: Microsemi Corporation Series: POWER MOS 7® FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock6,822
APTM100H45STG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 18A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock4,356

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