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Taiwan Semiconductor Corporation Transistors - FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerTaiwan Semiconductor Corporation
Records 301
Page 11/11
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TSM680P06CZ C0G
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL
4,734
-
P-Channel
MOSFET (Metal Oxide)
60V
18A (Tc)
4.5V, 10V
68mOhm @ 6A, 10V
2.2V @ 250µA
16.4nC @ 10V
±20V
870pF @ 30V
-
42W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3