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Toshiba Semiconductor and Storage Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerToshiba Semiconductor and Storage
Records 225
Page 6/8
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CMS20I30A(TE12L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 2A M-FLAT
5,616
-
Schottky
30V
2A
450mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 30V
82pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
150°C (Max)
CMS15I40A(TE12L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1.5A M-FLAT
7,902
-
Schottky
40V
1.5A
490mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
62pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
150°C (Max)
CMS30I30A(TE12L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 3A M-FLAT
7,992
-
Schottky
30V
3A
490mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 30V
82pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
150°C (Max)
CMS20I40A(TE12L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 2A M-FLAT
6,282
-
Schottky
40V
2A
520mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
62pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
150°C (Max)
CMS30I40A(TE12L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 3A M-FLAT
3,276
-
Schottky
40V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
62pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
150°C (Max)
CMS14(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 60V 2A MFLAT
4,572
-
Schottky
60V
2A
580mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMH05(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 1A M-FLAT
2,016
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
10µA @ 400V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMC02(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 1A M-FLAT
8,730
-
Standard
400V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMS16(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 3A MFLAT
4,599
-
Schottky
40V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMH08(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 2A M-FLAT
6,102
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
10µA @ 400V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMS15(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 60V 3A M-FLAT
4,842
-
Schottky
60V
3A
580mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 60V
102pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMH08A(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 2A MFLAT
5,202
-
Standard
400V
2A
1.8V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMH01(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 3A M-FLAT
6,570
-
Standard
200V
3A
980mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
10µA @ 200V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMH02A(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 3A M-FLAT
5,598
-
Standard
400V
3A
1.8V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
10µA @ 400V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
1SS370TE85LF
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 100MA SC70
8,838
-
Standard
200V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
60ns
1µA @ 200V
3pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SC-70
125°C (Max)
TRS6E65C,S1AQ
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 650V 6A TO220-2L
3,492
-
Silicon Carbide Schottky
650V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
90µA @ 650V
35pF @ 650V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C (Max)
TRS8E65C,S1Q
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 650V 8A TO220-2L
8,910
-
Silicon Carbide Schottky
650V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
90µA @ 650V
44pF @ 650V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C (Max)
TRS10E65C,S1Q
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 650V 10A TO220-2L
8,352
-
Silicon Carbide Schottky
650V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
90µA @ 650V
-
Through Hole
TO-220-2
TO-220-2L
175°C (Max)
TRS12E65C,S1Q
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 650V 12A TO220-2L
6,516
-
Silicon Carbide Schottky
650V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
90µA @ 170V
65pF @ 650V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C (Max)
CMS01(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 3A MFLAT
7,038
-
Schottky
30V
3A
370mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 30V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 125°C
CMS02(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 3A MFLAT
6,768
-
Schottky
30V
3A
400mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 125°C
CMS03(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 3A MFLAT
6,804
-
Schottky
30V
3A
450mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMS04(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 5A MFLAT
5,508
-
Schottky
30V
5A
370mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
8mA @ 30V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 125°C
CMS09(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A MFLAT
8,874
-
Schottky
30V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMS11(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 2A MFLAT
7,344
-
Schottky
40V
2A
550mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CRH01(TE85L)
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 1A SFLAT
7,902
-
Standard
200V
1A
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRS01(TE85L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A SFLAT
5,580
-
Schottky
30V
1A
360mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 30V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 125°C
CRS04(TE85L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1A SFLAT
5,796
-
Schottky
40V
1A
510mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRS08(TE85L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1.5A SFLAT
2,484
-
Schottky
30V
1.5A
360mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 125°C
CRS09(TE85L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1.5A SFLAT
7,632
-
Schottky
30V
1.5A
460mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 30V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C