Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Arrays

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Vce Saturation (Max) @ Ib, Ic

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DC Current Gain (hFE) (Min) @ Ic, Vce

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CategorySemiconductors / Transistors / Transistors - Bipolar (BJT) - Arrays

ManufacturerToshiba Semiconductor and Storage

Records 61

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Image	Part Number	Manufacturer	Description	In Stock	Quantity	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	HN1A01F-GR(TE85L,F	Toshiba Semiconductor and Storage	TRANS 2PNP 50V 0.15A SM6	3,490		-	2 PNP (Dual)	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	300mW	80MHz	125°C (TJ)	Surface Mount	SC-74, SOT-457	SM6

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