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Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - RF

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CategorySemiconductors / Transistors / Transistors - Bipolar (BJT) - RF
ManufacturerToshiba Semiconductor and Storage
Records 35
Page 2/2
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SC5108-Y,LF
Toshiba Semiconductor and Storage
TRANS RF NPN 10V 1GHZ SSM
3,204
-
NPN
10V
6GHz
-
11dB
100mW
120 @ 5mA, 5V
30mA
-
Surface Mount
SC-75, SOT-416
SSM
2SC4915-Y,LF
Toshiba Semiconductor and Storage
RF TRANS NPN 30V 550MHZ SSM
7,434
-
NPN
30V
550MHz
2.3dB ~ 5dB @ 100MHz
17dB ~ 23dB
100mW
100 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
2SC5096-R,LF
Toshiba Semiconductor and Storage
RF TRANS NPN 10V 10GHZ SSM
2,682
-
NPN
10V
10GHz
1.4dB @ 1GHz
1.4dB
100mW
50 @ 7mA, 6V
15mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
2SC5088-O(TE85L,F)
Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ USQ
5,292
-
NPN
12V
7GHz
1dB @ 500MHz
18dB
100mW
80 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-82A, SOT-343
USQ
2SC5066-Y,LF
Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ SSM
4,662
-
NPN
12V
7GHz
1dB @ 500MHz
-
100mW
120 @ 10mA, 5V
30mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM