Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Transistors - Bipolar (BJT) - Single

ManufacturerToshiba Semiconductor and Storage

Records 377

Page 13/13

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SD2257(CANO,A,Q)	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3	2,142	-	NPN	3A	100V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SD2257(CANO,Q,M)	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3	6,426	-	NPN	3A	100V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SD2257(Q,M)	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3	3,186	-	NPN	3A	100V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SD2257,KEHINQ(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3	3,132	-	NPN	3A	100V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SD2257,NIKKIQ(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3	7,632	-	NPN	3A	100V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SD2257,Q(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3	4,266	-	NPN	3A	100V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SD2695(T6CANO,A,F	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3	2,034	-	NPN	2A	60V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SD2695(T6CANO,F,M	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3	4,158	-	NPN	2A	60V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SD2695(T6CNO,A,F)	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3	3,636	-	NPN	2A	60V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SD2695,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3	8,028	-	NPN	2A	60V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SD2695,T6F(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3	3,598	-	NPN	2A	60V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
TTC009,F(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 80V TO220-3	2,664	-	NPN	3A	80V	500mV @ 100mA, 1A	100nA (ICBO)	100 @ 500mA, 5V	2W	150MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
TTC009,F(M	Toshiba Semiconductor and Storage	TRANS NPN 3A 80V TO220-3	7,398	-	NPN	3A	80V	500mV @ 100mA, 1A	100nA (ICBO)	100 @ 500mA, 5V	2W	150MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1020-Y,F(M	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	6,336	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y,T6NSF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	4,284	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y,T6WNLF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	3,312	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1721RTE85LF	Toshiba Semiconductor and Storage	TRANS PNP 300V 100MA TO236-3	3,472	-	PNP	100mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	30 @ 20mA, 10V	150mW	50MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini

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