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MJD253-1G

MJD253-1G

For Reference Only

Part Number MJD253-1G
PNEDA Part # MJD253-1G
Description TRANS PNP 100V 4A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 21,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 28 - May 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MJD253-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMJD253-1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
MJD253-1G, MJD253-1G Datasheet (Total Pages: 10, Size: 196.8 KB)
PDFMJD253-001 Datasheet Cover
MJD253-001 Datasheet Page 2 MJD253-001 Datasheet Page 3 MJD253-001 Datasheet Page 4 MJD253-001 Datasheet Page 5 MJD253-001 Datasheet Page 6 MJD253-001 Datasheet Page 7 MJD253-001 Datasheet Page 8 MJD253-001 Datasheet Page 9 MJD253-001 Datasheet Page 10

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MJD253-1G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Power - Max1.4W
Frequency - Transition40MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

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