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SI7421DN-T1-E3

SI7421DN-T1-E3 SI7421DN-T1-E3

For Reference Only

Part Number SI7421DN-T1-E3
PNEDA Part # SI7421DN-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 30V 6.4A 1212-8
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 3,726
Warehouses USA, Europe, China, Hong Kong SAR
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Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

SI7421DN-T1-E3 Resources

Brand Vishay Siliconix
Mfr. Part NumberSI7421DN-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7421DN-T1-E3, SI7421DN-T1-E3 Datasheet (Total Pages: 12, Size: 528.37 KB)
PDFSI7421DN-T1-E3 Datasheet Cover
SI7421DN-T1-E3 Datasheet Page 2 SI7421DN-T1-E3 Datasheet Page 3 SI7421DN-T1-E3 Datasheet Page 4 SI7421DN-T1-E3 Datasheet Page 5 SI7421DN-T1-E3 Datasheet Page 6 SI7421DN-T1-E3 Datasheet Page 7 SI7421DN-T1-E3 Datasheet Page 8 SI7421DN-T1-E3 Datasheet Page 9 SI7421DN-T1-E3 Datasheet Page 10 SI7421DN-T1-E3 Datasheet Page 11

SI7421DN-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs25mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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