SH8M11TB1
For Reference Only
| Part Number | SH8M11TB1 |
| PNEDA Part # | SH8M11TB1 |
| Description | MOSFET N/P-CH 30V 3.5A 8SOP |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,628 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 28 - May 3 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SH8M11TB1 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | SH8M11TB1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SH8M11TB1 Datasheet
- where to find SH8M11TB1
- Rohm Semiconductor
- Rohm Semiconductor SH8M11TB1
- SH8M11TB1 PDF Datasheet
- SH8M11TB1 Stock
- SH8M11TB1 Pinout
- Datasheet SH8M11TB1
- SH8M11TB1 Supplier
- Rohm Semiconductor Distributor
- SH8M11TB1 Price
- SH8M11TB1 Distributor
SH8M11TB1 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.9nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 85pF @ 10V |
| Power - Max | 2W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.9A Rds On (Max) @ Id, Vgs 36mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |
Manufacturer ON Semiconductor Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 50mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 19µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V Power - Max 51W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PG-TDSON-8-4 |
Manufacturer IXYS Series HiPerFET™ FET Type 4 N-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 40A Rds On (Max) @ Id, Vgs 116mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case V2-PAK Supplier Device Package V2-PAK |
Manufacturer IXYS Series Polar™ FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 36A, 22A Rds On (Max) @ Id, Vgs 40mOhm @ 31A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V Power - Max 125W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case i4-Pac™-5 Supplier Device Package ISOPLUS i4-PAC™ |
