Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STB11N65M5

STB11N65M5

For Reference Only

Part Number STB11N65M5
PNEDA Part # STB11N65M5
Description MOSFET N CH 650V 9A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,480
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 8 - Jul 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB11N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB11N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB11N65M5, STB11N65M5 Datasheet (Total Pages: 30, Size: 1,017.69 KB)
PDFSTP11N65M5 Datasheet Cover
STP11N65M5 Datasheet Page 2 STP11N65M5 Datasheet Page 3 STP11N65M5 Datasheet Page 4 STP11N65M5 Datasheet Page 5 STP11N65M5 Datasheet Page 6 STP11N65M5 Datasheet Page 7 STP11N65M5 Datasheet Page 8 STP11N65M5 Datasheet Page 9 STP11N65M5 Datasheet Page 10 STP11N65M5 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STB11N65M5 Datasheet
  • where to find STB11N65M5
  • STMicroelectronics

  • STMicroelectronics STB11N65M5
  • STB11N65M5 PDF Datasheet
  • STB11N65M5 Stock

  • STB11N65M5 Pinout
  • Datasheet STB11N65M5
  • STB11N65M5 Supplier

  • STMicroelectronics Distributor
  • STB11N65M5 Price
  • STB11N65M5 Distributor

STB11N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs480mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds644pF @ 100V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

NTMFS4H02NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

37A (Ta), 193A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2651pF @ 12V

FET Feature

-

Power Dissipation (Max)

3.13W (Ta), 83W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

IPB65R095C7ATMA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ C7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

95mOhm @ 11.8A, 10V

Vgs(th) (Max) @ Id

4V @ 590µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2140pF @ 400V

FET Feature

-

Power Dissipation (Max)

128W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQI2N30TU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

2.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.7Ohm @ 1.05A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

130pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.13W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SI1400DL-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

150mOhm @ 1.7A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

568mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363

AUIRFR2307Z

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2190pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

LTM4625IY#PBF

LTM4625IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A

FGH75T65UPD

FGH75T65UPD

ON Semiconductor

IGBT 650V 150A 375W TO-247AB

CY62187EV30LL-55BAXI

CY62187EV30LL-55BAXI

Cypress Semiconductor

IC SRAM 64M PARALLEL 48FBGA

EN6347QI

EN6347QI

Intel

DC DC CONVERTER 0.6-6.24V

LTST-C191KSKT

LTST-C191KSKT

Lite-On Inc.

LED YELLOW CLEAR SMD

OP2177ARMZ-REEL

OP2177ARMZ-REEL

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

LT1963AEFE-3.3#TRPBF

LT1963AEFE-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A 16TSSOP

MC14094BDR2G

MC14094BDR2G

ON Semiconductor

IC SHIFT REGSTR 8BIT CMOS 16SOIC

STW20NK50Z

STW20NK50Z

STMicroelectronics

MOSFET N-CH 500V 17A TO-247

MP1584EN-LF-Z

MP1584EN-LF-Z

Monolithic Power Systems Inc.

IC REG BUCK ADJUSTABLE 3A 8SOIC

IS42S16160G-7BLI-TR

IS42S16160G-7BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

ABM8-25.000MHZ-D2-T

ABM8-25.000MHZ-D2-T

Abracon

CRYSTAL 25.000MHZ 18PF SMD