FGH75T65UPD
For Reference Only
| Part Number | FGH75T65UPD |
| PNEDA Part # | FGH75T65UPD |
| Description | IGBT 650V 150A 375W TO-247AB |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,964 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FGH75T65UPD Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FGH75T65UPD |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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FGH75T65UPD Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 150A |
| Current - Collector Pulsed (Icm) | 225A |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 75A |
| Power - Max | 375W |
| Switching Energy | 2.85mJ (on), 1.2mJ (off) |
| Input Type | Standard |
| Gate Charge | 385nC |
| Td (on/off) @ 25°C | 32ns/166ns |
| Test Condition | 400V, 75A, 3Ohm, 15V |
| Reverse Recovery Time (trr) | 85ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 180A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A Power - Max 290W Switching Energy 115µJ (on), 195µJ (off) Input Type Standard Gate Charge 35nC Td (on/off) @ 25°C 8ns/35ns Test Condition 390V, 20A, 3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 16A Current - Collector Pulsed (Icm) 32A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 9A Power - Max 60W Switching Energy 150µJ (on), 250µJ (off) Input Type Standard Gate Charge 34nC Td (on/off) @ 25°C 28ns/150ns Test Condition 480V, 9A, 50Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 65A Current - Collector Pulsed (Icm) 72A Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 24A Power - Max 250W Switching Energy 115µJ (on), 600µJ (off) Input Type Standard Gate Charge 75nC Td (on/off) @ 25°C 41ns/104ns Test Condition 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr) 89ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
