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1N5822-E3/51 Datasheet

1N5822-E3/51 Datasheet
Total Pages: 4
Size: 64.99 KB
Vishay Semiconductor Diodes Division
This datasheet covers 2 part numbers: 1N5822-E3/51, 1N5822/54
1N5822-E3/51 Datasheet Page 1
1N5822-E3/51 Datasheet Page 2
1N5822-E3/51 Datasheet Page 3
1N5822-E3/51 Datasheet Page 4
1N5822-E3/51

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

525mV @ 3A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 40V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

DO-201AD, Axial

Supplier Device Package

DO-201AD

Operating Temperature - Junction

-65°C ~ 125°C

1N5822/54

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

525mV @ 3A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 40V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

DO-201AD, Axial

Supplier Device Package

DO-201AD

Operating Temperature - Junction

-65°C ~ 125°C