1N5822-E3/51
For Reference Only
| Part Number | 1N5822-E3/51 |
| PNEDA Part # | 1N5822-E3-51 |
| Description | DIODE SCHOTTKY 40V 3A DO201AD |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 2,826 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 23 - Jun 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N5822-E3/51 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | 1N5822-E3/51 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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1N5822-E3/51 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 525mV @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 2mA @ 40V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Supplier Device Package | DO-201AD |
| Operating Temperature - Junction | -65°C ~ 125°C |
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Manufacturer Rohm Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.55V @ 12A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 240µA @ 600V Capacitance @ Vr, F 438pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Full Pack Supplier Device Package TO-220FM Operating Temperature - Junction 175°C (Max) |
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