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1N8030-GA Datasheet

1N8030-GA Datasheet
Total Pages: 6
Size: 615.01 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers: 1N8030-GA
1N8030-GA Datasheet Page 1
1N8030-GA Datasheet Page 2
1N8030-GA Datasheet Page 3
1N8030-GA Datasheet Page 4
1N8030-GA Datasheet Page 5
1N8030-GA Datasheet Page 6
1N8030-GA

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

750mA

Voltage - Forward (Vf) (Max) @ If

1.39V @ 750mA

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

5µA @ 650V

Capacitance @ Vr, F

76pF @ 1V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-257-3

Supplier Device Package

TO-257

Operating Temperature - Junction

-55°C ~ 250°C