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1N8030-GA

1N8030-GA

For Reference Only

Part Number 1N8030-GA
PNEDA Part # 1N8030-GA
Description DIODE SCHOTTKY 650V 750MA TO257
Manufacturer GeneSiC Semiconductor
Unit Price Request a Quote
In Stock 5,022
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

1N8030-GA Resources

Brand GeneSiC Semiconductor
ECAD Module ECAD
Mfr. Part Number1N8030-GA
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
1N8030-GA, 1N8030-GA Datasheet (Total Pages: 6, Size: 615.01 KB)
PDF1N8030-GA Datasheet Cover
1N8030-GA Datasheet Page 2 1N8030-GA Datasheet Page 3 1N8030-GA Datasheet Page 4 1N8030-GA Datasheet Page 5 1N8030-GA Datasheet Page 6

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1N8030-GA Specifications

ManufacturerGeneSiC Semiconductor
Series-
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)650V
Current - Average Rectified (Io)750mA
Voltage - Forward (Vf) (Max) @ If1.39V @ 750mA
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0ns
Current - Reverse Leakage @ Vr5µA @ 650V
Capacitance @ Vr, F76pF @ 1V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-257-3
Supplier Device PackageTO-257
Operating Temperature - Junction-55°C ~ 250°C

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