2N5550_J24Z Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 140V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V Power - Max 625mW Frequency - Transition 300MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 140V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V Power - Max 625mW Frequency - Transition 300MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 140V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V Power - Max 625mW Frequency - Transition 300MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 140V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V Power - Max 625mW Frequency - Transition 300MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 140V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V Power - Max 625mW Frequency - Transition 300MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 140V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V Power - Max 625mW Frequency - Transition 300MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 140V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V Power - Max 625mW Frequency - Transition 300MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
