2N5550TAR
For Reference Only
| Part Number | 2N5550TAR |
| PNEDA Part # | 2N5550TAR |
| Description | TRANS NPN 140V 0.6A TO-92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 116,868 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N5550TAR Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2N5550TAR |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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2N5550TAR Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 140V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Power - Max | 625mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
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Manufacturer Central Semiconductor Corp Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V Power - Max 2W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package SOT-223 |
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