Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2N5639 Datasheet

2N5639 Datasheet
Total Pages: 3
Size: 51.45 KB
ON Semiconductor
This datasheet covers 5 part numbers: 2N5639, 2N5639RLRAG, 2N5639G, 2N5638RLRAG, 2N5638RLRA
2N5639 Datasheet Page 1
2N5639 Datasheet Page 2
2N5639 Datasheet Page 3
2N5639

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

35V

Drain to Source Voltage (Vdss)

30V

Current - Drain (Idss) @ Vds (Vgs=0)

25mA @ 20V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

-

Input Capacitance (Ciss) (Max) @ Vds

10pF @ 12V (VGS)

Resistance - RDS(On)

60 Ohms

Power - Max

310mW

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5639RLRAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

35V

Drain to Source Voltage (Vdss)

30V

Current - Drain (Idss) @ Vds (Vgs=0)

25mA @ 20V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

-

Input Capacitance (Ciss) (Max) @ Vds

10pF @ 12V (VGS)

Resistance - RDS(On)

60 Ohms

Power - Max

310mW

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5639G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

35V

Drain to Source Voltage (Vdss)

30V

Current - Drain (Idss) @ Vds (Vgs=0)

25mA @ 20V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

-

Input Capacitance (Ciss) (Max) @ Vds

10pF @ 12V (VGS)

Resistance - RDS(On)

60 Ohms

Power - Max

310mW

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5638RLRAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

35V

Drain to Source Voltage (Vdss)

30V

Current - Drain (Idss) @ Vds (Vgs=0)

50mA @ 20V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

-

Input Capacitance (Ciss) (Max) @ Vds

10pF @ 12V (VGS)

Resistance - RDS(On)

30 Ohms

Power - Max

310mW

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5638RLRA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

35V

Drain to Source Voltage (Vdss)

30V

Current - Drain (Idss) @ Vds (Vgs=0)

50mA @ 20V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

-

Input Capacitance (Ciss) (Max) @ Vds

10pF @ 12V (VGS)

Resistance - RDS(On)

30 Ohms

Power - Max

310mW

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3