2N5639G
For Reference Only
| Part Number | 2N5639G |
| PNEDA Part # | 2N5639G |
| Description | JFET N-CH 35V 0.31W TO92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,376 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 7 - May 12 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N5639G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2N5639G |
| Category | Semiconductors › Transistors › Transistors - JFETs |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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2N5639G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 35V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 25mA @ 20V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | - |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 12V (VGS) |
| Resistance - RDS(On) | 60 Ohms |
| Power - Max | 310mW |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 500mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds 10pF @ 15V (VGS) Resistance - RDS(On) 100 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 25V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 200mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 2V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 6 Ohms Power - Max 625mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 25V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 200mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 2V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 6 Ohms Power - Max 625mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 25V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 4mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 500mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds 5pF @ 15V Resistance - RDS(On) - Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 20V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 100µA @ 5V Current Drain (Id) - Max 1mA Voltage - Cutoff (VGS off) @ Id 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V Resistance - RDS(On) - Power - Max 100mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Short Body Supplier Device Package TO-92S |
