2N6027RL1G Datasheet
2N6027RL1G Datasheet
Total Pages: 8
Size: 148.85 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 2 part numbers:
2N6027RL1G, 2N6027RL1
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Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 1.6V Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 50µA Current - Peak 2µA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 1.6V Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 50µA Current - Peak 2µA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
