2N6027RL1G
For Reference Only
| Part Number | 2N6027RL1G |
| PNEDA Part # | 2N6027RL1G |
| Description | THYRISTOR PROG UNIJUNCT 40V TO92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,066 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N6027RL1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2N6027RL1G |
| Category | Semiconductors › Transistors › Transistors - Programmable Unijunction |
| Datasheet |
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2N6027RL1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Voltage | 40V |
| Power Dissipation (Max) | 300mW |
| Voltage - Output | 11V |
| Voltage - Offset (Vt) | 1.6V |
| Current - Gate to Anode Leakage (Igao) | 10nA |
| Current - Valley (Iv) | 50µA |
| Current - Peak | 2µA |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
