2SA1955FVBTPL3Z Datasheet
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 400mA Voltage - Collector Emitter Breakdown (Max) 12V Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 2V Power - Max 100mW Frequency - Transition 130MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-723 Supplier Device Package VESM |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 400mA Voltage - Collector Emitter Breakdown (Max) 12V Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 2V Power - Max 100mW Frequency - Transition 130MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package CST3 |
