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2SA1955FVBTPL3Z

2SA1955FVBTPL3Z

For Reference Only

Part Number 2SA1955FVBTPL3Z
PNEDA Part # 2SA1955FVBTPL3Z
Description TRANS PNP 12V 0.4A VESM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 91,572
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SA1955FVBTPL3Z Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SA1955FVBTPL3Z
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2SA1955FVBTPL3Z, 2SA1955FVBTPL3Z Datasheet (Total Pages: 5, Size: 237.15 KB)
PDF2SA1955FVBTPL3Z Datasheet Cover
2SA1955FVBTPL3Z Datasheet Page 2 2SA1955FVBTPL3Z Datasheet Page 3 2SA1955FVBTPL3Z Datasheet Page 4 2SA1955FVBTPL3Z Datasheet Page 5

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2SA1955FVBTPL3Z Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)400mA
Voltage - Collector Emitter Breakdown (Max)12V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA, 2V
Power - Max100mW
Frequency - Transition130MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM

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