2SC5551AE-TD-E Datasheet
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 3.5GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 1.3W DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 50mA, 5V Current - Collector (Ic) (Max) 300mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package PCP |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 3.5GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 1.3W DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 50mA, 5V Current - Collector (Ic) (Max) 300mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package PCP |