2SC5551AE-TD-E
For Reference Only
| Part Number | 2SC5551AE-TD-E |
| PNEDA Part # | 2SC5551AE-TD-E |
| Description | RF TRANS NPN 30V 3.5GHZ PCP |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,896 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2SC5551AE-TD-E Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2SC5551AE-TD-E |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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2SC5551AE-TD-E Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Frequency - Transition | 3.5GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 1.3W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 300mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | PCP |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 4.7V Frequency - Transition 47GHz Noise Figure (dB Typ @ f) 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz Gain 9dB ~ 31dB Power - Max 160mW DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 25mA, 3V Current - Collector (Ic) (Max) 45mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 4-SMD, Flat Leads Supplier Device Package 4-TSFP |
