2SK3666-2-TB-E Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) - Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 600µA @ 10V Current Drain (Id) - Max 10mA Voltage - Cutoff (VGS off) @ Id 180mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V Resistance - RDS(On) 200 Ohms Power - Max 200mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package 3-CP |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) - Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 1.2mA @ 10V Current Drain (Id) - Max 10mA Voltage - Cutoff (VGS off) @ Id 180mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V Resistance - RDS(On) 200 Ohms Power - Max 200mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package 3-CP |
