2SK3666-2-TB-E
For Reference Only
| Part Number | 2SK3666-2-TB-E | ||||||||||||||||||
| PNEDA Part # | 2SK3666-2-TB-E | ||||||||||||||||||
| Description | JFET NCH 30V 200MW 3CP | ||||||||||||||||||
| Manufacturer | ON Semiconductor | ||||||||||||||||||
| Unit Price |
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| In Stock | 9,943 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Apr 30 - May 5 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2SK3666-2-TB-E Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2SK3666-2-TB-E |
| Category | Semiconductors › Transistors › Transistors - JFETs |
| Datasheet |
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Logistics Mode
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2SK3666-2-TB-E Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 600µA @ 10V |
| Current Drain (Id) - Max | 10mA |
| Voltage - Cutoff (VGS off) @ Id | 180mV @ 1µA |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Resistance - RDS(On) | 200 Ohms |
| Power - Max | 200mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | 3-CP |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) - Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 2.5mA @ 10V Current Drain (Id) - Max 10mA Voltage - Cutoff (VGS off) @ Id 180mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V Resistance - RDS(On) 200 Ohms Power - Max 100mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package SMCP |
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