2SK536-TB-E Datasheet
2SK536-TB-E Datasheet
Total Pages: 4
Size: 184.5 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
2SK536-TB-E
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 20Ohm @ 10mA, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 15pF @ 10V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature 125°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-59 Package / Case TO-236-3, SC-59, SOT-23-3 |
