Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK536-TB-E

2SK536-TB-E

For Reference Only

Part Number 2SK536-TB-E
PNEDA Part # 2SK536-TB-E
Description MOSFET N-CH 50V 0.1A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,428
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK536-TB-E Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number2SK536-TB-E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK536-TB-E, 2SK536-TB-E Datasheet (Total Pages: 4, Size: 184.5 KB)
PDF2SK536-TB-E Datasheet Cover
2SK536-TB-E Datasheet Page 2 2SK536-TB-E Datasheet Page 3 2SK536-TB-E Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2SK536-TB-E Datasheet
  • where to find 2SK536-TB-E
  • ON Semiconductor

  • ON Semiconductor 2SK536-TB-E
  • 2SK536-TB-E PDF Datasheet
  • 2SK536-TB-E Stock

  • 2SK536-TB-E Pinout
  • Datasheet 2SK536-TB-E
  • 2SK536-TB-E Supplier

  • ON Semiconductor Distributor
  • 2SK536-TB-E Price
  • 2SK536-TB-E Distributor

2SK536-TB-E Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds15pF @ 10V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature125°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-59
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

SI5406CDC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

20mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 6V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 5.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead

NVMFS5C430NT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 106W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

JANTXV2N7236

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/595

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

220mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-254AA

Package / Case

TO-254-3, TO-254AA (Straight Leads)

IRF830APBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

FET Feature

-

Power Dissipation (Max)

74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IPA70R360P7SXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

12.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

3.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

16.4nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

517pF @ 400V

FET Feature

-

Power Dissipation (Max)

26.4W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

Recently Sold

V5.5MLA0603NH

V5.5MLA0603NH

Littelfuse

VARISTOR 8.2V 30A 0603

AD8033ARZ

AD8033ARZ

Analog Devices

IC OPAMP VFB 1 CIRCUIT 8SOIC

MX29GL512FLT2I-10Q

MX29GL512FLT2I-10Q

Macronix

IC FLASH 512M PARALLEL 56TSOP

BC847PN-7-F

BC847PN-7-F

Diodes Incorporated

TRANS NPN/PNP 45V 0.1A SOT363

NC7WZ132K8X

NC7WZ132K8X

ON Semiconductor

IC GATE NAND SCHMITT 2CH US8

MAX791ESE+T

MAX791ESE+T

Maxim Integrated

IC SUPERVISOR MPU 16-SOIC

SD103AW-E3-08

SD103AW-E3-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V SOD123

NR6028T100M

NR6028T100M

Taiyo Yuden

FIXED IND 10UH 1.9A 84.5 MOHM

MBR0520LT1G

MBR0520LT1G

ON Semiconductor

DIODE SCHOTTKY 20V 500MA SOD123

PC28F00BM29EWHA

PC28F00BM29EWHA

Micron Technology Inc.

IC FLASH 2G PARALLEL 64FBGA

FDS6675

FDS6675

ON Semiconductor

MOSFET P-CH 30V 11A 8-SOIC

ST16C2552IJ44TR-F

ST16C2552IJ44TR-F

MaxLinear, Inc.

IC UART FIFO 16B DUAL 44PLCC