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DMT10H025SSS-13 Datasheet

DMT10H025SSS-13 Datasheet
Total Pages: 7
Size: 471.07 KB
Diodes Incorporated
This datasheet covers 1 part numbers: DMT10H025SSS-13
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DMT10H025SSS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

7.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1544pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)