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DMT10H025SSS-13

DMT10H025SSS-13

For Reference Only

Part Number DMT10H025SSS-13
PNEDA Part # DMT10H025SSS-13
Description MOSFETN-CHAN 100V SO-8
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,596
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMT10H025SSS-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMT10H025SSS-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMT10H025SSS-13, DMT10H025SSS-13 Datasheet (Total Pages: 7, Size: 471.07 KB)
PDFDMT10H025SSS-13 Datasheet Cover
DMT10H025SSS-13 Datasheet Page 2 DMT10H025SSS-13 Datasheet Page 3 DMT10H025SSS-13 Datasheet Page 4 DMT10H025SSS-13 Datasheet Page 5 DMT10H025SSS-13 Datasheet Page 6 DMT10H025SSS-13 Datasheet Page 7

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DMT10H025SSS-13 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1544pF @ 50V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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