EPC2107ENGRT Datasheet
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Manufacturer EPC Series eGaN® FET Type 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.7A, 500mA Rds On (Max) @ Id, Vgs 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V Vgs(th) (Max) @ Id 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 16pF @ 50V, 7pF @ 50V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 9-VFBGA Supplier Device Package 9-BGA (1.35x1.35) |
Manufacturer EPC Series eGaN® FET Type 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.7A, 500mA Rds On (Max) @ Id, Vgs 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V Vgs(th) (Max) @ Id 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 16pF @ 50V, 7pF @ 50V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 9-VFBGA Supplier Device Package 9-BGA (1.35x1.35) |
