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EPC2107ENGRT

EPC2107ENGRT

For Reference Only

Part Number EPC2107ENGRT
PNEDA Part # EPC2107ENGRT
Description GAN TRANS 3N-CH 100V BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 4,140
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2107ENGRT Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2107ENGRT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
EPC2107ENGRT, EPC2107ENGRT Datasheet (Total Pages: 10, Size: 2,386.93 KB)
PDFEPC2107ENGRT Datasheet Cover
EPC2107ENGRT Datasheet Page 2 EPC2107ENGRT Datasheet Page 3 EPC2107ENGRT Datasheet Page 4 EPC2107ENGRT Datasheet Page 5 EPC2107ENGRT Datasheet Page 6 EPC2107ENGRT Datasheet Page 7 EPC2107ENGRT Datasheet Page 8 EPC2107ENGRT Datasheet Page 9 EPC2107ENGRT Datasheet Page 10

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EPC2107ENGRT Specifications

ManufacturerEPC
SerieseGaN®
FET Type3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1.7A, 500mA
Rds On (Max) @ Id, Vgs320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Vgs(th) (Max) @ Id2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds16pF @ 50V, 7pF @ 50V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case9-VFBGA
Supplier Device Package9-BGA (1.35x1.35)

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