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FDC658AP Datasheet

FDC658AP Datasheet
Total Pages: 5
Size: 213.03 KB
ON Semiconductor
This datasheet covers 1 part numbers: FDC658AP
FDC658AP Datasheet Page 1
FDC658AP Datasheet Page 2
FDC658AP Datasheet Page 3
FDC658AP Datasheet Page 4
FDC658AP Datasheet Page 5
FDC658AP

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.1nC @ 5V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6