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FDC658AP

FDC658AP

For Reference Only

Part Number FDC658AP
PNEDA Part # FDC658AP
Description MOSFET P-CH 30V 4A SSOT6
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 322,866
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDC658AP Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDC658AP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDC658AP, FDC658AP Datasheet (Total Pages: 5, Size: 213.03 KB)
PDFFDC658AP Datasheet Cover
FDC658AP Datasheet Page 2 FDC658AP Datasheet Page 3 FDC658AP Datasheet Page 4 FDC658AP Datasheet Page 5

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FDC658AP Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.1nC @ 5V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 15V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6

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