FF11MR12W1M1B11BOMA1 Datasheet
FF11MR12W1M1B11BOMA1 Datasheet
Total Pages: 7
Size: 476.59 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
FF11MR12W1M1B11BOMA1
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Manufacturer Infineon Technologies Series CoolSiC™+ FET Type 2 N-Channel (Dual) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 100A Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 15V Vgs(th) (Max) @ Id 5.55V @ 40mA Gate Charge (Qg) (Max) @ Vgs 250nC @ 15V Input Capacitance (Ciss) (Max) @ Vds 7950pF @ 800V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
