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FF11MR12W1M1B11BOMA1

FF11MR12W1M1B11BOMA1

For Reference Only

Part Number FF11MR12W1M1B11BOMA1
PNEDA Part # FF11MR12W1M1B11BOMA1
Description MOSFET 2 N-CH 1200V 100A MODULE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FF11MR12W1M1B11BOMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberFF11MR12W1M1B11BOMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
FF11MR12W1M1B11BOMA1, FF11MR12W1M1B11BOMA1 Datasheet (Total Pages: 7, Size: 476.59 KB)
PDFFF11MR12W1M1B11BOMA1 Datasheet Cover
FF11MR12W1M1B11BOMA1 Datasheet Page 2 FF11MR12W1M1B11BOMA1 Datasheet Page 3 FF11MR12W1M1B11BOMA1 Datasheet Page 4 FF11MR12W1M1B11BOMA1 Datasheet Page 5 FF11MR12W1M1B11BOMA1 Datasheet Page 6 FF11MR12W1M1B11BOMA1 Datasheet Page 7

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FF11MR12W1M1B11BOMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolSiC™+
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C100A
Rds On (Max) @ Id, Vgs11mOhm @ 100A, 15V
Vgs(th) (Max) @ Id5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs250nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds7950pF @ 800V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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