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FGB30N6S2DT Datasheet

FGB30N6S2DT Datasheet
Total Pages: 12
Size: 281.66 KB
ON Semiconductor
This datasheet covers 5 part numbers: FGB30N6S2DT, FGP30N6S2D, FGH30N6S2, FGH30N6S2D, FGB30N6S2D
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FGB30N6S2DT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

46ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

FGP30N6S2D

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

46ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

FGH30N6S2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

FGH30N6S2D

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

46ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

FGB30N6S2D

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

46ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB